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20+ Best Mcq basic electronics

1➤ In forward region of its characteristics, a diode appears as

2➤ An electrical breakdown of a p-n junction occurs if

3➤ In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is

4➤ The reverse current of a silicon diode is:

5➤ In P-N junction the avalanche breakdown voltage with semiconductor resistivity (a) . (b) . (c) . (d)

6➤ A p-n junction diode's dynamic conductance is directly proportional to

7➤ What is the reverse recovery time of a diode when switched from forward bias VF to reverse bias VR?

8➤ The i-v characteristics of a tunnel diode exhibit?

9➤ Material used for fabrication of tunnel diode is

10➤ . The efficiency of a LED for generating light is directly proportional to the

11➤ Which is the diode used for measuring light intensity?

12➤ Which one of the following statements is correct? A photodiode works on the principle of

13➤ The region of operation of a MOSFET to work as a linear resistor and linear amplifiers are

14➤ When the drain voltage in an N-MOSFET is negative, it is operating in

15➤ A junction FET, can be used as a voltage variable resistor

16➤ The small value of drain to source voltage JFET behaves like a

17➤ Which one of the following is not true?

18➤ Compared to BJT a JFET

19➤ The shape of transfer characteistics of JFET is very nearly a

20➤ Thermal runaway is not encountered in FETs because

21➤ JFET has main drawback of

22➤ The Ebers-Moll model of a BJT is valid

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